Modification of silicon under synergy of high-intensity implantation of titanium ions and energy influence of a high-power ion beam on a surface

Abstract

Methods of modifying surface and near-surface layers of materials and coatings by ion beams can be applied in many fields of science and technology. To practically implement the technologies for the targeted improvement of the performance properties of parts and products for various purposes, it is of great interest to develop the methods of deep ion doping of near-surface layers of semiconductor materials, as well as metals and alloys due to the enhancement of radiation stimulated diffusion under conditions when the irradiated sample’s deep layers are not subjected to significant temperature impact. This work studies the features and regularities of the implementing the synergy of high-intensity titanium ion implantation at current densities of several hundred milliamps per square centimeter with simultaneous energy impact of a submillisecond ion beam with a power density reaching several tens of kilowatts per square centimeter on the surface. This work is the first to show that the synergy of high-intensity ion implantation and the energy impact of a high power density ion beam, taking the titanium implantation into silicon as an example, provides the possibility of increasing the ion doping depth from fractions of a micron to 6 microns by increasing the irradiation time from 0.5 to 60 min.